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SiC

碳化硅肖特基二极管(SiC Schottky Barrier Diode,SiC SBD)

 

型 号 IF(AV) VRRM VRSM VDC QC IFSM IFRM Ptot TJ VF IR C 封装形式
@TJ
=25℃
@TJ=25℃ @TJ=25℃ @TJ=25℃,f=1MHz
Pulse:tp
=10µs
@IF(AV) @VRRM @VR
=0V
@VR
=400V
@VR
=800V
@VR
=1000V
A V V V nC A A W V μA PF PF PF PF
tPower-
SS01•
JB0BA6E
20 650 650 650 82.5 -55~+175 2.3 26.3 1900.0 120.0 88.6 TO-247-2L
tPower-
SS01•
JB0XX6E
20 650 650 650 -55~+175 1.7 26.3
tPower-
SS01•
JC0BA12
30 1200 1200 1200 180.0 -55~+175 1.37 25 TO-247-2L
tPower-
SS01•
JB5BA17
25 1700 1700 1700 203 -55~+175 1.39 76.1 3190.0 151.0 139.0 TO-247-2L
tPower-
SS01•
JB5XX17
25 1700 1700 1700 -55~+175 1.43 76.1